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* DC Current Gain -- hFE = 30 (Min) @ IC = 2.0 Adc * BD 808, 810 are complementary with BD 807, 890
* Pulse Test: Pulse Width
(c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data
Preferred devices are Motorola recommended choices for future use and best overall value.
. . . designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.
Plastic High Power Silicon PNP Transistor
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
REV 7 Current-Gain Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz) Base-Emitter On Voltage* (IC = 4.0 Adc, VCE = 2.0 Vdc) Collector-Emitter Saturation Voltage* (IC = 3.0 Adc, IB = 0.3 Adc) DC Current Gain (IC = 2.0 A, VCE = 2.0 V) (IC = 4.0 A, VCE = 2.0 V) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) Collector Cutoff Current (VCB = 70 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) Collector-Emitter Sustaining Voltage* (IC = 0.1 Adc, IB = 0) Thermal Resistance, Junction to Case Operating and Storage Junction Temperature Range Total Device Dissipation TC = 25_C Derate above 25_C Base Current Collector Current Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Characteristic Rating Characteristic
x 300 s, Duty Cycle x 2.0%.
Symbol
TJ, Tstg
VCBO
VCEO
VEBO
PD
IC
IB
Symbol
JC
BD808 BD810
BD808 BD810
Type
VCE(sat)
VBE(on)
Symbol
BVCEO
ICBO
IEBO
hFE
- 55 to + 150
fT
1.39
Max
Value
90 720
6.0
5.0
10
70 80
60 80
Watts mW/_C
_C/W
BD808 BD810
BD808 BD810
Unit
Unit
Adc
Adc
Vdc
Vdc
Vdc
Type
_C
Min
1.5
30 15
60 80
--
--
--
-- --
10 AMPERE POWER TRANSISTORS PNP SILICON 60, 80 VOLTS 90 WATTS
*Motorola Preferred Device
BD808 BD810*
CASE 221A-06 TO-220AB
Order this document by BD808/D
Max
1.6
1.1
2.0
1.0 1.0
--
-- --
-- --
mAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
1
BD808 BD810
90 10 5 ms 1 ms PD, POWER DISSIPATION (WATTS) IC, COLLECTOR CURRENT (AMP) .5 ms 1 ms 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175
3 TJ = 150C
dc
1
0.3
BD808 BD810 1 3 10 30 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100
0.1
TC, CASE TEMPERATURE (C)
Figure 1. Active Region DC Safe Operating Area (see Note 1)
2.0 1.8 1.6 VOLTAGE (VOLTS) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 VBE @ VCE = 2.0 V 0.02 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 VCE(sat) @ IC/IB = 10 VBE(sat) @ IC/IB = 10 hFE, DC CURRENT GAIN 100 50 TJ = 25C 500 300
Figure 2. Power-Temperature Derating Curve
VCE = 2.0 V TJ = 150C 25C
- 55C
10 5.0
0.01
IC, COLLECTOR CURRENT (AMP)
0.05 0.1 0.5 1.0 IC, COLLECTOR CURRENT (AMPS)
5.0
10
Figure 3. "On" Voltages
1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.01 0.01
Figure 4. Current Gain
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
D = 0.5 0.2 0.1 0.05 0.02 JC(t) = r(t) JC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) JC(t) 0.5 1.0 2.0 3.0 5.0 t, PULSE WIDTH (ms) 20 30 50 SINGLE P(pk) PULSE t1
SINGLE PULSE
t2
DUTY CYCLE, D = t1/t2 100 200 300 500 1000
0.02 0.03
0.05
0.1
0.2 0.3
Figure 5. Thermal Response Note 1: There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. 2 The data of Figure 1 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150_C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
v
Motorola Bipolar Power Transistor Device Data
BD808 BD810
PACKAGE DIMENSIONS
-T- B
4
SEATING PLANE
F T S
C
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04
Q
123
A U K
H Z L V G D N R J
STYLE 1: PIN 1. 2. 3. 4.
BASE COLLECTOR EMITTER COLLECTOR
CASE 221A-06 TO-220AB ISSUE Y
Motorola Bipolar Power Transistor Device Data
3
BD808 BD810
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4
Motorola Bipolar Power Transistor Device Data
*BD808/D*
BD808/D

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